(Hong Kong)
Product Summary
The 2SC2879 is a silicon npn epitaxial planar TOSHIBA transistor for 2~30MHz SSB linear power amplifier applications.
Parametrics
2SC2879 maximum ratings: (1)Collector-Base Voltage, VCBO: 45 V; (2)Collector-Emitter Voltage, VCES: 45 V; (3)Collector-Emitter Voltage, VCEO: 18 V; (4)Emitter-Base Voltage, VEBO: 4 V; (5)Collector Current, IC: 25 A; (6)Collector Power Dissipation, PC: 250 W; (7)Junction Temperature, Tj: 175 ℃; (8)Storage Temperature Range, Tstg: -65~175 ℃.
Features
2SC2879 features:(1)specified 12.5V,28MHz characteristics;(2)output power:Po=100WPEP;(3)power gain:Gp=13dB;(4)collector efficiency:ηC=35%(Min.);(5)intermodulation distortion:IMD=-24dB(Max.)(MIL standard).
Diagrams
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 2SC2879 |
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2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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