(Hong Kong)
Product Summary
The IR2107S are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immuneCMOS technologies enable ruggedized monolithicconstruction. The logic input is compatible with stan-dard CMOS or LSTTL output. The output drivers of IR2107S feature a high pulse current buffer stage designedfor minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configurationwhich operates up to 600 volts.
Parametrics
The absolute maximum ratings of IR2107 are (1)High side floating absolute voltage:625V; (2)High side floating supply offset voltage:VB + 0.3V; (3)High side floating output voltage:VB + 0.3V; (4)Low side and logic fixed supply voltage:25V; (5)Logic input voltage :VCC + 0.3V; (6)Allowable offset supply voltage transient:50V/ns; (7)Junction temperature:150°C; (8)Storage temperature:150°C; (9)Lead temperature (soldering, 10 seconds):300°C
Features
The features of IR2107S can be summarized as (1)Floating channel designed for bootstrap operationFully operational to +600VTolerant to negative transient voltagedV/dt immune; (2)Gate drive supply range from 10 to 20V; (3)Undervoltage lockout for both channels; (4)5V Schmitt triggered input logic; (5)Matched propagation delay for both channels; (6)Logic and power ground +/-5V offset.; (7)Lower di/dt gate driver for better noise immunity; (8)Outputs out of phase with inputs (IR2107/IR21074)
Diagrams
<P><IMG alt="IR2107S Pin Configuration" src="http://www.seekic.com/uploadfile/ic-mfg/201281202534894.jpg" border=0></P>
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IR2107S |
International Rectifier |
IC DRIVER HIGH/LOW DRIVER 8-SOIC |
Data Sheet |
Negotiable |
|
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 |
IR2107STR |
|
IC DRIVER HIGH/LOW DRIVER 8-SOIC |
Data Sheet |
Negotiable |
|
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