Product Summary

The VNS14NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protectthe chip in harsh environments. Fault feedback can be detected by monitoring thevoltage at the input pin.

Parametrics

The absolute maximum ratings of VNS14NV04 are
(1)Drain-source Voltage (VIN=0V): Internally Clamped V;
(2)Input Voltage: Internally Clamped V;
(3)Input Current: +/-20mA;
(4)Minimum Input Series Impedance: 10Ω;
(5)Drain Current: Internally Limited A;
(6)Reverse DC Output Current: -15A;
(7)Electrostatic Discharge (R=1.5KΩ, C=100pF):4000V;
(8)Electrostatic Discharge on output pin only(R=330Ω, C=150pF): 16500V

Features

The features of VNS14NV04 can be summarized as
(1)LINEAR CURRENT LIMITATION;
(2)THERMAL SHUT DOWN;
(3)SHORT CIRCUIT PROTECTION;
(4)INTEGRATED CLAMP;
(5)LOW CURRENT DRAWN FROM INPUT PIN;
(6)DIAGNOSTIC FEEDBACK THROUGH INPUTPIN;
(7)ESD PROTECTION;
(8)DIRECT ACCESS TO THE GATE OF THEPOWER MOSFET (ANALOG DRIVING;
(9)COMPATIBLE WITH STANDARD POWERMOSFET

Diagrams

<DIV><IMG alt="VNS14NV04 Block Diagram" src="http://www.seekic.com/uploadfile/ic-mfg/2012710202758331.jpg" border=0></DIV>

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